ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,254, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China) and BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNO... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,255, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Buried-trench dual metal-nitride gate semiconductor device... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,256, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Youngwoo... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,257, issued on Nov. 3, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure with a work function ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,258, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device including a conductive fi... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,259, issued on Nov. 3, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Memory device having planarized fins and method of... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,260, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor devices" was invented by Miny... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,261, issued on Nov. 3, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and method for fabricating the same" ... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,262, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor device" was invented by Dong-Sik... Read More
ALEXANDRIA, Va., Nov. 3 -- United States Patent no. 12,787,263, issued on Nov. 3, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including vertical act... Read More